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| Si5463EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.062 @ VGS = --4.5 V --20 20 0.068@ VGS = --3.6 V 0.085 @ VGS = --2.5 V 0.120 @ VGS = --1.8 V ID (A) --5.1 --4.9 --4.4 --3.7 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 k Marking Code LB XX Lot Traceability and Date Code D P-Channel MOSFET Bottom View Part # Code Ordering Information: Si5463EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --20 12 Unit V --5.1 --3.7 --15 --1.9 2.3 1.2 --55 to 150 260 --3.8 --2.7 --1.0 1.25 0.65 W A _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 84 20 Maximum 55 100 25 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. When using HBM. The MM rating is 300 V c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71364 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-1 Si5463EDC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 4.5 V VDS = --16 V, VGS = 0 V VDS = --16 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --4.0 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = --3.6 V, ID = --3.5 A VGS = --2.5 V, ID = --3.0 A VGS = --1.8 V, ID = --1.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --5 V, ID = --4.0 A IS = --1.0 A, VGS = 0 V --15 0.051 0.056 0.070 0.100 10 --0.75 --1.2 0.062 0.068 0.085 0.120 S V --0.45 1.5 --1 --5 A mA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = --10 V, RL = 10 ID --1 A, VGEN = --4.5 V, RG = 6 VDS = --10 V, VGS = --4.5 V, ID = --4.0 A 9.7 2.7 1.4 1.85 3.2 1.9 3.2 2.5 4.5 2.5 4.5 ms 15 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 2.5 V 12 I D -- Drain Current (A) VGS = 4.5 thru 3 V I D -- Drain Current (A) 12 15 Transfer Characteristics TC = --55_C 25_C 9 2V 9 125_C 6 6 3 1.5 V 1 V, 0.5 V 0 2 4 6 8 10 3 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 71364 S-21251--Rev. C, 05-Aug-02 2-2 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.25 r DS(on) -- On-Resistance ( ) 2000 Capacitance C -- Capacitance (pF) 0.20 VGS = 1.8 V 0.15 VGS = 2.5 V VGS = 3.6 V 0.05 VGS = 4.5 V 1500 Ciss 1000 0.10 500 Coss Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 12 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 4.0 A 9 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.0 A 1.4 r DS(on) -- On-Resistance ( ) (Normalized) 10 15 20 25 1.2 6 1.0 3 0.8 0 0 5 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 10 TJ = 150_C 1 r DS(on) -- On-Resistance ( ) 0.20 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) 0.15 ID = 4.0 A 0.10 TJ = 25_C 0.1 0.05 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71364 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-3 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.4 0.3 0.2 0.1 0.0 --0.1 --0.2 --50 ID = 250 mA Power (W) 30 Threshold Voltage 50 Single Pulse Power 40 V GS(th) Variance (V) 20 10 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 Time (sec) 10 100 600 TJ -- Temperature (_C) Gate-Source Voltage vs. Gate Current 1000 10,000 1,000 800 TA = 25_C I GSS ( m A) 100 10 1 0.1 0.01 0.001 0 0 2 4 6 8 10 12 VGS -- Gate-to-Source Voltage (V) 0.0001 0.10 Gate-Source Voltage vs. Gate Current I GSS ( m A) 600 150_C 400 200 25_C 1 VGS -- Gate-to-Source Voltage (V) 10 20 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71364 S-21251--Rev. C, 05-Aug-02 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71364 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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